| File | Date | Descr | Size | Popular | Mfg | Model |
| Rficsolutions%20Inc. : Full Text Matches - Check >> |
| Found in: fulltext index (40) |
| RGDIV01.pdf | 11/02/08 | RGDIV01 is a low noise divide by 8 static divider
utilizing InGaP HBT technology. The device
operates from 7 to 20 GHz. | 162 kB | 50 | Rficsolutions Inc. | RGDIV01 |
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| RJVC01.pdf | 11/02/08 | RJVC01 is 0.5 - 1.15 GHz, voltage controlled
oscillator. It can operate at 1.2 V supply and
consumes only 2.5 mA current. The tuning
bandwidth of the oscillator is 650 MHz with good
phase noise performance. | 62 kB | 99 | Rficsolutions Inc. | RJVC01 is 0.5 - 1.15 GHz, voltage controlled |
| RJVC02.pdf | 11/02/08 | RJVC02 is 2.0 - 6.0 GHz, voltage controlled
oscillator. It can operate at 1.8 V supply and
consumes only 1.0 mA current. The tuning
bandwidth of the oscillator is 4 GHz with good
phase noise performance. | 72 kB | 55 | Rficsolutions Inc. | RJVC02 is 2.0 - 6.0 GHz, voltage controlled |
| RJVC02.pdf | 11/02/08 | RJVC02 is 2.0 - 6.0 GHz, voltage controlled
oscillator. It can operate at 1.8 V supply and
consumes only 1.0 mA current. The tuning
bandwidth of the oscillator is 4 GHz with good
phase noise performance. | 72 kB | 50 | Rficsolutions Inc. | RJVC02 is 2.0 - 6.0 GHz, voltage controlled |
| GRVO3.pdf | 11/02/08 | The GRV03 is 14 to 21 GHz: broadband Negative
Resistance Generator designed using 2 um HBT
Technology. The GRV03 consumes only 4 mA
current and the die area is very small.
The phase noise of the oscillator can be improved
using external high Q resona | 58 kB | 75 | Rficsolutions Inc. | GRV03 |
| GEDA01.pdf | 11/02/08 | The GEDA01 is 7.0 GHz to 20.0 GHz low power
single stage buffer amplifier. The amplifier is
designed using 2 μm InGaP HBT Technology for
high frequency applications.
Driver amplifier shows gain of 4.5 dB at 20 GHz with
power output of 9 dBm. It | 48 kB | 517 | Rficsolutions Inc. | The GEDA01 is 7.0 GHz to 20.0 GHz low power |
| GRO1.pdf | 11/02/08 | The GRO1 is high performance 14-16 GHz oscillator
with off-chip resonator and it is designed on 2 um
InGaP HBT Technology.
It requires the High Q external resonator. The VCO
is taking only 3.5 mA current and the layout is very
small.
Functional Diag | 54 kB | 69 | Rficsolutions Inc. | GRO1 |
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| RTDA01.pdf | 12/02/08 | The RTDA01 is a 2.0 to 5.0 GHz; CMOS driver
amplifier. The device is designed for the 802.11
a/b/g WLAN systems.
The driver amplifier gives 18 dBm Pout for the
frequency range 2.0 to 5.0 GHz. The input and
output matching is on chip which reduces the | 56 kB | 153 | Rficsolutions Inc. | RTDA01 |
| GRDA1.pdf | 11/02/08 | The GRDA1 is 10 GHz to 20 GHz differential
amplifier designed on 2 um InGaP HBT process.
The gain of GRDA1 is 5 dB typically with flatness of
±3dB over the entire bandwidth. Typical current
requirement for GRDA1 is 24 mA.
The one dB compression point | 46 kB | 75 | Rficsolutions Inc. | GRDA1 |
| GRVO2.pdf | 11/02/08 | The GRV02 is 10 to 15 GHz; broadband VCO
designed on 2 um GaAs HBT Technology. The
resonator part is split on-chip inductor and off-chip
Varactor. The VCO consumes only 3.5 mA current
and the layout is very tiny.
The phase noise of the GEV03 can be i | 64 kB | 97 | Rficsolutions Inc. | GRV02 |
| GEDA02.pdf | 11/02/08 | The GEDA02 is 20 GHz to 40 GHz low power buffer
amplifier. The amplifier is designed using 2 μm
InGaP HBT process for high frequency applications.
Driver amplifier shows gain of 1dB at 40 GHz with
power output of 0dBm. It operates at 4.2Volts. | 44 kB | 276 | Rficsolutions Inc. | The GEDA02 is 20 GHz to 40 GHz low power buffer |
| RDA03(2-4 GHz Driver Amp).pdf | 13/02/08 | The RDA03 is a 2.0 to 4.0 GHz, high gain Driver
Amplifier. It provides very good gain flatness over
the band. It requires +3.3 Volt supply.
It has tunability by having some off chip
components. It has the option to optimize externally
with off chip i | 128 kB | 96 | Rficsolutions.Inc | RDA03 |
| GRFM1.pdf | 11/02/08 | The GRFM1 is 10 GHz to 20 GHz Frequency
multiplier designed on 2 um InGaP HBT process.
GRFM1 multiplies the input frequency from 10 GHz
to 20 GHz by the factor of 2 so as to produce the
output of 20 GHz to 40 GHz. Conversion gain of
frequency multipl | 41 kB | 133 | Rficsolutions Inc. | GRFM1 |
| RJCT01_CATV Line amplifier_.pdf | 12/02/08 | The RJCT01 is a CATV Line Amplifier IP block,
designed on 0.18um SiGe BiCMOS technology.
The amplifier provides low distortion and noise
figure along with flat gain. The part works with a
supply Voltage of +6.0 V.
This can operates from 40 to 870 MHz | 174 kB | 467 | Rficsolutions Inc. | RJCT01 |
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| GEVO3.pdf | 11/02/08 | The GEV03 is 15 to 20 GHz broadband VCO
designed on 2 um GaAs HBT process. The device is
designed for high frequency applications. The
resonator part is split into on-chip inductor and offchip
varactor. The GEV03 consumes only 3.5 mA
current.
The ph | 44 kB | 67 | Rficsolutions Inc. | GEV03 |
| RGLNA09(5.15-5.35 GHz GaAs pHEMT ).pdf | 13/02/08 | The RGLNA09 is 5.15 to 5.35 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor Low noise amplifier .The
device is designed for 802.11a and WLAN MIMO
system.
The noise figure is 1.4 dB at 5.25 GHz. The
RGLNA09 i | 36 kB | 61 | Rficsolutions.Inc | RGLNA09 |
| RGLNA10(7.0-26.0 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA10 is 7.0-26.0 GHz; Low Noise
Distributed Amplifiers using GaAs pHEMT
Technology. The self-biased amplifier provides 19
dB of gain and 14 dBm of output power at P1 dB
gain compression while requiring only 86 mA from a
single 3.0 V supply.
G | 44 kB | 198 | Rficsolutions.Inc | RGLNA10 |
| RJL01_1.5_1.7GHz_GPS_LNA_.pdf | 12/02/08 | The RJL01 is 1.5 to 1.7 GHz, Low Noise Amplifier
IP Block. The LNA is designed on the 0.18um SiGe
BiCMOS Process. The device is designed for GPS
system. The LNA has provision for mode control to
turn off.
It requires a single +3.0 Volt supply and con | 169 kB | 197 | Rficsolutions Inc. | RJL01 |
| RGLNA08(2.4-2.5 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA08 is 2.4 to 2.5 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor Low noise amplifier. The
device is designed for 802.11b/g and WLAN MIMO
system.
The noise figure is 1.5 dB at 2.4 GHz and die area
is | 77 kB | 64 | Rficsolutions.Inc | RGLNA08 |
| RJP04__3.4_3.6GHz_SiGe BiCMOS_PA_.pdf | 12/02/08 | The RJPA04 is 3.4 to 3.6 GHz; high efficiency SiGe
BiCMOS power amplifier. The device is designed to
provide high efficiency with good power output for
WiMax applications.
The device consumes 310 mA and it gives the
power output of 28 dBm at P1 dB co | 173 kB | 139 | Rficsolutions Inc. | RJPA04 |