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Search results for: HBT-01-01.pdf (found: 12 regularSearch) ask for a document
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HBT-01-01.pdf01/12/15Polytron TV IC HBT547 kB2815PolytronHBT 01-01
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5991-3578EN HBT Prescaler Evaluation Board - Technical Overview c20140718 [2].pdf25/08/20 Agilent 5991-3578EN HBT Prescaler Evaluation Board - Technical Overview c20140718 [2].pdf998 kB2Agilent5991-3578EN HBT Prescaler Evaluation Board - Technical Overview c20140718 [2]
Polytron_T29N12VUL_HBT_01_01_Pdf.pdf08/08/20 . Rare and Ancient Equipment POLYTRON TV T29N12VUL Polytron_T29N12VUL_HBT_01_01_Pdf.pdf542 kB467POLYTRONPolytron T29N12VUL HBT 01 01 Pdf
RGDIV01.pdf11/02/08RGDIV01 is a low noise divide by 8 static divider utilizing InGaP HBT technology. The device operates from 7 to 20 GHz.162 kB50Rficsolutions Inc.RGDIV01
GRVO3.pdf11/02/08The GRV03 is 14 to 21 GHz: broadband Negative Resistance Generator designed using 2 um HBT Technology. The GRV03 consumes only 4 mA current and the die area is very small. The phase noise of the oscillator can be improved using external high Q resona58 kB75Rficsolutions Inc.GRV03
GEDA01.pdf11/02/08The GEDA01 is 7.0 GHz to 20.0 GHz low power single stage buffer amplifier. The amplifier is designed using 2 μm InGaP HBT Technology for high frequency applications. Driver amplifier shows gain of 4.5 dB at 20 GHz with power output of 9 dBm. It 48 kB517Rficsolutions Inc.The GEDA01 is 7.0 GHz to 20.0 GHz low power
GRO1.pdf11/02/08The GRO1 is high performance 14-16 GHz oscillator with off-chip resonator and it is designed on 2 um InGaP HBT Technology. It requires the High Q external resonator. The VCO is taking only 3.5 mA current and the layout is very small. Functional Diag54 kB69Rficsolutions Inc.GRO1
GRDA1.pdf11/02/08The GRDA1 is 10 GHz to 20 GHz differential amplifier designed on 2 um InGaP HBT process. The gain of GRDA1 is 5 dB typically with flatness of ±3dB over the entire bandwidth. Typical current requirement for GRDA1 is 24 mA. The one dB compression point46 kB75Rficsolutions Inc.GRDA1
GRVO2.pdf11/02/08The GRV02 is 10 to 15 GHz; broadband VCO designed on 2 um GaAs HBT Technology. The resonator part is split on-chip inductor and off-chip Varactor. The VCO consumes only 3.5 mA current and the layout is very tiny. The phase noise of the GEV03 can be i64 kB97Rficsolutions Inc.GRV02
GEDA02.pdf11/02/08The GEDA02 is 20 GHz to 40 GHz low power buffer amplifier. The amplifier is designed using 2 μm InGaP HBT process for high frequency applications. Driver amplifier shows gain of 1dB at 40 GHz with power output of 0dBm. It operates at 4.2Volts.44 kB276Rficsolutions Inc.The GEDA02 is 20 GHz to 40 GHz low power buffer
GRFM1.pdf11/02/08The GRFM1 is 10 GHz to 20 GHz Frequency multiplier designed on 2 um InGaP HBT process. GRFM1 multiplies the input frequency from 10 GHz to 20 GHz by the factor of 2 so as to produce the output of 20 GHz to 40 GHz. Conversion gain of frequency multipl41 kB133Rficsolutions Inc.GRFM1
GEVO3.pdf11/02/08The GEV03 is 15 to 20 GHz broadband VCO designed on 2 um GaAs HBT process. The device is designed for high frequency applications. The resonator part is split into on-chip inductor and offchip varactor. The GEV03 consumes only 3.5 mA current. The ph44 kB67Rficsolutions Inc.GEV03

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