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2SK3296.pdf24/02/05MOS FIELD EFFECT TRANSISTOR DESCRIPTION: The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchr422 kB1381NEC2SK3296
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2sk3296.pdf02/07/20 . Electronic Components Datasheets Active components Transistors Toshiba 2sk3296.pdf422 kB0Toshiba2sk3296

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