LGE 2n3906 free download

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2N3906(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features PNP silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the NPN transistor 2N3904 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3906 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC = -10A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC =-1mA , IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE= -10A, IC=0 -5 V Collector cut-off current ICBO VCB= -40 V,IE=0 -0.1 A Collector cut-off current ICEX VCE= -30 V,VBE(off)=-3V -50 nA Emitter cut-off current IEBO VEB= -5 V , IC=0 -0.1 A hFE1 VCE=-1 V, IC= -10mA 100 400 DC current gain hFE2 VCE=-1 V, IC= -50mA 60 hFE3 VCE=-1 V, IC= -100mA 30 Collector-emitter saturation voltage VCE(sat) IC= -50mA, IB= -5mA -0.4 V Base-emitter saturation voltage VBE(sat) IC= -50mA, IB= -5mA -0.95 V VCE=-20V, IC= -10mA Transition frequency fT 250